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4V Drive Pch MOSFET
RP1E090RP
? Structure
Silicon P-channel MOSFET
? Dimensions (Unit : mm)
MPT6
? Features
(6)
(5)
(4)
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
(1)
(2)
(3)
? Application
Switching
? Packaging specifications
? Inner circuit
Type
Package
Code
Taping
TR
(6)
(5)
(4)
Basic ordering unit (pieces)
RP1E090RP
1000
?
? 2
? Absolute maximum ratings (Ta = 25 ? C)
(1) Source
(2) Source
? 1
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
? 30
? 20
Unit
V
V
(3) Gate
(4) Drain
(5) Drain
(6) Drain
(1) (2) (3)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
*1
*1
*2
? 9
? 36
? 1.6
? 36
2.0
A
A
A
A
W
Channel temperature
Range of storage temperature
Tch
Tstg
150
? 55 to +150
? C
? C
*1 Pw ? 10 ? s, Duty cycle ? 1%
*2 Mounted on a ceramic board.
? Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to Ambient
Rth
(ch-a) *
62.5
? C / W
*Mounted on a ceramic board.
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?20 10 ROHM Co., Ltd. All rights reserved.
1/5
2010.06 - Rev.A
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